Post-growth technology of multi-junction photovoltaic converters based on A3B5 heterostructures

Investigation and development of the post-growth technology for fabricatingmulti-junction photovoltaic converters based on GaInP/GaInAs/Geheterostructure has been carried out. Antireflection coating, ohmiccontacts mesa-structure forming stages have reviewed. Thetechnology n + -GaAs contact layer etching with help ofplasma-chemical, liquid ion-beam investigated. coefficient radiation from heterostructure withTiO x /SiO 2 (x close to 2) antireflection coating surface was less then 3% inwavelength range 450-850 nm. The value resistance n- andp-type conductivity 3·10 -5 -3·10 -6 Ωcm , decrease ofphotosensitive region shading degree at increased bus-bar hasbeen archived. current leakage decreased thevalue 10 -9 A voltage 1 V. Keywords: converters, ohmic contacts,